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2N2960 BAV19W MRF15 03203 10F60SC3 MMBTS 3SUGCTR VSC8131
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  sy semiconductors s henzhen sy semiconductors c o. ltd. eb seri es transistors e 3150 features high voltage capability high speed switching wide soa application fluorescent lamp electron i c ballast absolute maximum ratings (tc=2 5 ) to - 220 npn parameter symbol value u n i t collector ? base voltage v cbo 7 00 v collector ? emitter voltage v ceo 6 00 v emitter ? base voltage v ebo 9 v collector current i c 1. 5 a junction temperat ure t j 150 storage temperat ure tstg - 65 - 150 electronic characteristics (tc=25 ) characteristics symbol test condition min max u n i t collector ? base cutoff current i cbo v cb = 7 00v 100 a collector ? emitter cutoff current i ceo v ce = 6 00v 250 a collec tor ? emitter voltage v ceo i c =10 ma i b =0 6 00 v emitter ? base voltage v ebo i e =1ma i c =0 9 v collector ? emitter saturation voltage vcesat i c = 1 a i b =0. 25 a 1.0 v base ? emitter saturation voltage vbesat i c = 0. 5 a i b =0.1 a 1. 2 v v ce =5v i c =1 ma 7 v ce = 5 v i c =0.2 a 10 40 dc current gain hfe v ce =5v i c = 1 .0 a 5 classification of hfe hfe 15 - 20 20 - 25 25 - 30 30 - 35 sy semiconductors 1/2
sy semiconductors shenzhen sy semiconductors co. ltd. eb series transistors e 3150 symbol min nom max symbol min nom max a 3.5 4.5 5.0 l 12.5 13.5 14.5 b 1.25 1.35 1.5 l1 2.5 3.37 4.5 b1 0.75 0.85 0.955 d1 5.9 6.5 7.1 b 0.6 b 1.2 c 0.35 0.43 0.55 q 1.5 2.5 3.5 d 14.0 15.5 16.5 q1 2.0 2.6 3.5 e 9.0 10.0 1 1.0 z 3.0 3.8 4.5 e 2.54 sy semiconductors 2/2


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